IEEE

Benchmarking a High Electron Mobility Transistor Using an Active Load-Pull System at 120 GHz–170 GHz

Abstract: This study presents an in-depth investigation into the high-frequency capabilities of a commercial 100 nm InP high electron mobility transistor (HEMT) through small and large signal analysis ...
IEEE

Design methodologies and circuit optimization techniques for low power CMOS VLSI design

Abstract: Low power is the real test for late hardware businesses. Control scattering is an essential thought as far as execution and area for VLSI Chip outline. Control administration procedures are ...
PNAS

Conductively coupled flexible silicon electronic systems for chronic neural electrophysiology

Contributed by John A. Rogers, August 19, 2018 (sent for review July 31, 2018; reviewed by George Malliaras and Joseph Wang) ...