Abstract: ESD is a well-known reliability aspect in Si technologies, but GaAs devices are more susceptible to ESD damage than the silicon devices. In this study, the ESD survivability of the InGaP HBT ...

Abstract: In this paper, a simple circuit is incorporated in a 650V E-mode GaN HEMT process technology to protect all terminals against ESD stress from any direction. Even in the worst case, with the ...

TE Connectivity’s Circuit Protection group addressed the problem by developing a family of silicon ESD (SESD) devices with ±20-kV contact and ±22-kV air discharge ratings, which surpass the IEC’s 8-kV ...