Abstract: ESD is a well-known reliability aspect in Si technologies, but GaAs devices are more susceptible to ESD damage than the silicon devices. In this study, the ESD survivability of the InGaP HBT ...

Abstract: In this paper, a simple circuit is incorporated in a 650V E-mode GaN HEMT process technology to protect all terminals against ESD stress from any direction. Even in the worst case, with the ...

The electronic content in modern cars has increased tremendously thanks to the demand for in-car entertainment (“infotainment”) systems and features, such as docking for smartphones, USB ports, and ...

There are a number of solutions for connecting your do-it-yourself project to a computer. Serial ports are easy to use, even if you have to do so via a universal serial bus (USB). The advantage of ...

TE Connectivity’s Circuit Protection group addressed the problem by developing a family of silicon ESD (SESD) devices with ±20-kV contact and ±22-kV air discharge ratings, which surpass the IEC’s 8-kV ...