The paper, entitled ‘Novel memory-efficient computer architecture integration in RISC-V with CXL’ reported that this demonstration device had achieved an acceleration factor of 16 to 128 times ...

With the particular needs of scientists and engineers in mind, researchers at the Department of Energy's Pacific Northwest ...

RICHLAND, Wash.-With the particular needs of scientists and engineers in mind, researchers at the Department of Energy's ...

NEO Semiconductor, a leading developer of breakthrough memory technologies, today introduced the world's first Extreme High Bandwidth Memory (X-HBM) architecture for AI chips. Built to meet the ...

Titans architecture complements attention layers with neural memory modules that select bits of information worth saving in the long term.

Recently, hafnia-based ferroelectric memory has emerged as a promising next-generation memory technology. Hafnia (Hafnium oxide) enables ferroelectric memories to operate at low voltages and high ...

Smart memory node device from UniFabriX is designed to accelerate memory performance and optimize data-center capacity for AI workloads.

Offering exceptional performance across benchmarks, Mavi excels in long-form video understanding with memory-augmentation technology that preserves deep context.

Introspect Technology, leading manufacturer of electronic test and measurement instruments for high-speed digital applications, is pleased to introduce a new family of DDR, LPDDR, and GDDR memory ...

Samsung's latest memory technology combines properties from flash storage and DRAM's extremely quick read-and-write speeds to create Selector-Only Memory.