A prototype MCU test chip with a 10.8 Mbit magnetoresistive random-access memory (MRAM) memory cell array—fabricated on a 22-nm embedded MRAM process—claims to accomplish a random read access ...

Real-time as well as store & forward on-board processing applications are increasingly requiring larger amounts of fast on-board storage, and the choice of memory technology has a major impact on ...

Renesas Electronics has announced the development of circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM) test chip that offers fast read and ...

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...

Why many commonly held beliefs about 3D flash memory are inaccurate. Details about some of the challenges that 3D flash memory faces as it continues to evolve. Insights into how adding layers affects ...

Designer and Developer of Non-Volatile Memories, Based on a Break-Through Technology, Expects to Offer Storage-Class Products With 4x the Density & 5-10x the Write Speed of Today’s NAND Flash ...

Neurodegenerative diseases remain some of the most difficult conditions to treat. Disorders like Parkinson’s and Alzheimer’s ...

How much is proximity worth? For memory, maybe you get away with an arms-length relationship if you give it more to do, according to Chris Edwards. Do designers need a change of mindset when it comes ...