News

Nanjing Wencai Industrial Intelligent Research Institute Co., Ltd. recently obtained a patent titled "A Structure for ESD Protection Circuit of Silicon Gate MOS Integrated Circuit." This news marks a ...
A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Find out how a digital technique performs multiplication on two bitstreams and avoids the cost of the analog multiplier.